jiangsu changji ang electronics technology co., l td so d - 1 23 plastic-encap sulate diodes www.cj-elec.com 1 bzt52 b 2v 4 -bzt52 b43 zener diode fea t ure z planar die constructio n z 350mw po wer dissipa tion on ceramic pcb z general purpose, mediu m current z ideall y suited for automated assembly processes z a vailable in lead free version maximum ratings ( t a =25 unless otherwise specified ) ch aracteristic symb ol value unit f orwa rd voltage (note 2) @ i f = 10ma v f 0.9 v po wer dissipa tion(note 1) p d 350 mw t hermal resistance from junction to ambient r ja 357 / w junction temper ature t j 150 sod-123 s torage te mperature range t stg - 5 5 ~ + 150 e , mar ,201 5
www.cj-elec.com 2 electrical characteristics t z e ner volt age range (note 2) maximum zener impedance (note 3 ) maximum reverse current typical te m p e r a t u r e coefficent @i zt c te s t current i zt c v z @i zt i zt z zt @i zt z zk @i zk i zk i r v r mv/c t y pe number t ype code nom(v) min(v) max(v) ma ? ma a v min max ma bz t 52b2v4 2wx 2.4 2.35 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 b z t52b2v7 2w1 2.7 2.65 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 b zt52b3v0 2w2 3.0 2.94 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 b z t52b3v3 2w3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 b z t52b3v6 2w4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 b zt52b3v9 2w5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 b zt52b4v3 2w6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 bz t 52b4v7 2w7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 b zt52b5v1 2w8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 b zt52b5v6 2w9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 b zt52b6v2 2wa 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 b zt52b6v8 2wb 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 b zt52b7v5 2wc 7.5 7.35 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 b zt52b8v2 2wd 8.2 8.04 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 bz t 52b9v1 2we 9.1 8.92 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 bz t 52b10 2wf 10 9.8 0 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 bz t 52b11 2wg 11 10.78 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 bz t 52b12 2wh 12 11.76 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 bz t 52b13 2wi 13 12.74 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 bz t 52b15 2wj 15 14.70 15.30 5 30 200 1.0 0.1 10.5 9.2 13.0 5 bz t 52b16 2wk 16 15.68 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 bz t 52b18 2wl 18 17.64 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 bz t 52b20 2wm 20 19.60 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 bz t 52b22 2wn 22 21.56 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 bz t 52b24 2wo 24 23.52 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 bz t 52b27 2wp 27 26.46 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 bz t 52b30 2wq 30 29.40 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 bz t 52b33 2wr 33 32.34 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 bz t 52b36 2ws 36 35.28 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 bz t 52b39 2wt 39 38.22 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 bz t 52b 43 2w u 43 41.16 42.84 2 13 0 35 0 0.5 0.1 2 9 . 4 3 6 .4 45.2 2 notes: 1. device mounted on ceramic pcb : 7. 6mm x 9.4mm x 0.8 7 mm with pad areas 25mm 2 2. short dura t ion test pulse used to minimize self-h eating ef fect 3. f = 1 k hz a = 2 5 unless otherwise specified e , mar ,201 5
z z z f m h o h f f r p 7 \ s l f d o & k d u d f w h u l v w l f v 4 6 8 10 12 14 16 18 20 22 1 10 100 4 6 8 10 12 14 16 18 20 22 1 10 100 1000 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 4 6 8 10 12 14 16 18 20 22 1 10 100 1000 4 6 8 10 12 14 16 18 20 22 1e-4 1e-3 0.01 0.1 6 . 2 5 . 6 5.1 6 . 8 7 . 5 8 . 2 9 . 1 1 0 p d =350m w t a =25 puls ed 0.5 = h q h u & k d u d f w h u l v w l f v 9 = 9 w r 9 i z , zener current (ma) v z , z ener volt age (v) 1 6 1 1 1 2 1 3 1 5 1 8 2 0 t a =25 f=1m hz bias at 50% o f v z nom 1v bias 0v bias 7 \ s l f d o & d s d f l w d q f h v z , nom inal zener voltage (v) c, capacit ance (pf ) v z @ i zt ty pical t a values f or bzt52bxxx series 7 h p s h u d w x u h & r h i i l f l h q w v vz , t emperature coefficient (mv/ ) v z , nom inal zener voltage (v) 3 r z h u ' h u d w l q j & x u y h po wer dissipation p d (mw) am bient te mperature t a ( ) i z =5m a ( i i h f w r i = h q h u 9 r o w d j h r q = h q h u , p s h g d q f h i z =1m a t a =25 i z(a c) =0.1i z( dc) f=1k hz v z , nom inal zener voltage (v) z zt , dynamic impedance(
) puls ed 7 \ s l f d o / h d n d j h & x u u h q w i r , leakag e current (ua) v z , nom inal zener voltage (v) t a =25 t a =100 notes: our company currently provide 5.1 v - 20 v products only ( 0 d u
z z z f m h o h f f r p 6 2 ' 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 ' 6 x j j h v w h g 3 d g / d \ r x w mi n max min ma x a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 d 1.500 1.700 0.059 0.067 e 2.600 2.800 0.102 0.110 e1 3.550 3.850 0.140 0.152 l l1 0.250 0.450 0.010 0.018 0 8 0 8 0.500 ref 0.020 ref symbol dimensions in millimeters dimensions in inches ( 0 d u
z z z f m h o h f f r p ( 0 d u 6 2 ' 7 d s h d q g 5 h h o
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